| 摘要 |
PURPOSE:To contrive the improvement of yield by a method wherein a conductive film is applied to a contact hole section and left as it is and after that, a metal film is further vapor deposited on the whole surface of the film and metal wiring is formed by patterning said deposited metal film. CONSTITUTION:After accumulating a silicon oxide film 60 as a layer insulating film on a silicon substrate 10, a contact hole 70 is opened by reactive ion etching. A polycrystal silicon film is accumulated as the first conductive film 100. Etching is applied to the film 100 so that the polycrystalline silicon film 100 may be left on the inside face of the contact hole 70 only by the reactive ion etching. As the second conductive film 110, a tungsten film, for example, is formed on the surface of the remaining film 100 and the contact hole 70 is buried therein. |
