| 摘要 |
In the process according to the invention, photoresist layers are applied to the face on top of one another and are exposed. In order to avoid any alignment problems in the process, two or more photoresist layers having different spectral sensitivity and/or dose sensitivity are applied on top of one another. These photoresist layers are then exposed, via one or more masks, to wave or particle radiation, and after exposure of all the layers is complete, they are developed individually and consecutively.
|
