| 摘要 |
PURPOSE:To monitor laser beams by disposing a photodiode side by side a buried hetero-junction laser having high performance on the same semiconductor substrate by sing a conventional cleavage method. CONSTITUTION:An N type buffer 102 and P-In0.88Ga0.12As0.23P0.77 103 are epitaxially formed to the (100)n-InP substrate 101, and streak grooves 104, 105 parallel in the <011> direction are formed by the liquid of H2SO4+H2O2+H2O, and shaped in inverted mesa form by selecting conditions. N-InP 106, and In0.7Ga0.3As0.65P0.35 being not added 107, P-InP 108 and an N-InGaAsP electrode 109 are deposited, and the layer 107 is filled up to the edges of the streak grooves by selecting the conditions of growth. Zn Diffused layers 110, 111 are formed to the upper sections of the streak grooves, an etched groove reaching the layer 106 is shaped to an intermediate section, and coated with SiO2 113, and the ohmic electrodes 114-116 of AuZn are attached. According to this constitution, the photodiode can be disposed side by side a laser resonant axis in excell-hetero-junction element 112 and lowering its yield. |
