| 摘要 |
PURPOSE:To enhance reliability and remarkably improve integration degrees, by constituting electrode wirings of three layers a polycrystalline semiconductor layer, an insulating layer and a metallic layer from the lower side, when providing the electrode wiring on element regions formed on a semiconductor substrate. CONSTITUTION:A thick field SiO2 film 2a is formed on the periphery of a P type Si substrate 1, and a gate 3a constituted of a polycrystalline Si is provided on the surface of the substrate 1 surrounded thereby via a thin gate SiO2 film 2b. Next, N type source and drain regions 4 are diffusion-formed in the substrate 1 on both sides thereof with the gate as a mask, and an SiO2 film 5 serving as a surface protecting film and a layer insulating film is vapor-grown over the entire surface. Thereafter, corresponded to the region 4, an aperture is opened on the film 5, and an electrode wiring is mounted here thereat in the followings: three layer constitution of an N type polycrystalline Si film 7, an SiO2 film 8 and an Al film 9 is formed from the side contacted on the region 4, and thus the alloying, contamination, disconnections, etc. generated on the polycrystalline Si film 7 are avoided. |
