| 摘要 |
PURPOSE:To generate no Si3N4, etc. on an element forming region, by performing a heat treatment after covering the element forming region on a substrate with a laminated film of an SiO2, a polycrystalline Si and an Si3N4, and forming channel stopper regions in the substrate on the both thereof by an ion implantation, when forming a thick field oxide film in the periphery of the semiconductor substrate. CONSTITUTION:An SiO2 film 12, a polycrystalline Si layer 13 and an Si3N4 film 14 are generated in lamination on a P type Si substrate 11, and a resist pattern 15 is provided on the element forming region. Next, an etching is performed down to the Si layer 13 with the pattern as a mask, and thus a laminated pattern 16 constituted of the layer 13 and the film 14 is survived only on the element forming region. Thereafter, P type impurity ions are implanted on the both end of the pattern 16 through a film 12 which is exposed, and thus an inversion preventing treatment of a field region is performed on the surface layer of the substrate 11. Next, the pattern 15 is removed, a weight oxidation is performed on the substrate 11 resulting in the generation of a field SiO2 film 17 underlaying P<+> type inversion preventing regions 18 on both side of the pattern 16. |
