| 摘要 |
<p>A stacked semiconductor IC device is disclosed which comprises a single-crystalline semiconductor substrate (10) having planar surfaces (12,14) with different height and a slant surface (16), a single-crystalline semiconductive layer (40) which is epitaxially grown from the substrate (10) on or above the substrate (10), and which has planar surfaces (42, 44) with different height and a slant surface (46) and a substantially uniform thickness, groups of semiconductor elements (20, 22, 50, 52) each formed on the low planar surface (14) of the substrate (10) and on the low planar surface (42) of the layer (40), and contact wiring pattern (58) passing through the slant portion of the layer (40) to electrically connect the element groups.</p> |
