| 摘要 |
PURPOSE:To make narrow the width of an Al wiring with a high current capacity, by keeping the Al wiring with a high current capacity thick and covering the exposed surface with a normal Al wiring, when providing an Al wiring with a high current capacity and a normal Al wiring on an SiO2 film adhered on an Si substrate. CONSTITUTION:An SiO2 film 5 is adhered on an Si substrate 1, and the first Al wiring pattern 8 with a high current capacity is formed thereon with this thickness formed thick. Next, the second Al wiring 9 which is normally thick is provided over the entire surface including this and etched resulting in a fixed margin on the entire surface of the wiring 8. Thus, an Al wiring 10 with a high current capacity constituted of A deg.C wiring 8 and 9 and an Al wiring 11 with a small current capacity constituted of the Al wiring 9 at a position separate therefrom are obtained. In this manner, the width of the Al wiring 10 can be formed narrow, and chip size is reduced. |
