SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a switching element conducting in both directions by a method wherein a SCR and a diode are juxtaposed to an Si base body, a pA<+> layer and an n<+> layer on one surface are short-circuited by an electrode and an nK layer and a p<+> layer are formed onto a p gate and a p layer on the other surface and connected in common. CONSTITUTION:The p<+> anode 2 of the SCR and the n<+> layer 5 of the diode are shaped to one surface of an n<-> substrate 1, and connected by the first electrode T1, and the p gate 6, a channel 7 thereof is formed to the other surface, and the n epitaxial layer 31 are stacked. The n<+> cathode 3 of the SCR and the p<+> layer 4 of the diode are shaped selectively, the layers 31, 6 and the substrate 1 are etched 14, 15 selectively, and the groove 15 is buried by an insulator 12. Electrodes 9-11 are molded, and the electrodes 9, 10 are connected and used as the second electrode T2. When a SG is opened and positive voltage is applied to the T1 and negative one to the T2, the device shows the forward characteristic C1 of the diode. When the SG is closed and reverse gate voltage is applied, the device shows a characteristic C2, and stopping potential increases together with gate voltage. When negative voltage is applied to the T1 and positive one to the T2, on the other hand, the device shows a characteristic C3, and the reverse conducting switching element of which approximately the same currents as the forward direction are obtained, both dv/dt resisting quantity and forward stopping dielectric resistance are high, arc- suppressing time is short and commutation does not fail is obtained.