| 摘要 |
PURPOSE:To prevent latch-up, and to fine the device by positioning an insulating layer at one side of an adjacent p or n layer isolated by the insulating layer and one part or all of the interface of a substrate. CONSTITUTION:SiO2 105 is formed selectively onto the p type Si substrate 101, the surface of the substrate is coated selectively with SiO2 107, and poly Si 108 is deposited. A p layer 109 is manufactured by diffusion from the substrate through the irradiation of laser beams, and plasma Si3N4 110 is stacked. The p layer 109 is etched through reactive ion etching while using Si3N4 110' remaining in a concave section as a mask, and the p layer 111 and the n layer 112, which are isolated, are shaped through the selective injection of P ions. The complementary MOS device is formed according to a predetermined method. According to this constitution, the complementary transistor is insulated by the SiO2 film 107, a parasitic transistor is not shaped, and the device is not latched up. The regions 111, 112 are flattened, the region 112 is determined by the width of the isolation layer 105, lateral diffusion is obstructed, and the device having high density is obtained. |
