| 摘要 |
In method of growing a crystallised body from a melt directing a gas mixture containing an additive gas capable of beneficially altering the physical or chemical properties of a crystallized body grown from a melt by means of a shaping member substantially uniformly over the entire melt surface of the meniscus existing between the top of the shaping member and the liquid/solid growth interface at which the crystallized body is formed. The method and apparatus are particularly suited to the growing of silicon ribbons from graphite crucibles for use in the production of photovoltaic solar cells, as evidenced by a substantial increase in the average minority carrier diffusion length in the silicon ribbon grown when the gas additive is a source of oxygen. |
