| 摘要 |
PURPOSE:To obtain a high-quality grown film having a few crystal defect and no impurity crawling from a substrate by a method wherein HCl is included in a silicon compound which is original gas when an epitaxial film is grown on a semiconductor substrate by vacuum vapor reactor. CONSTITUTION:A plurality of P type Si substrates are vertically erected with some space in a quartz reaction tube and the reaction tube is heated at 1,050 deg.C by using an electric furnace and pressure is reduced to 2 Torrs by a rotary pump. Next, H2, SiHCl3, PH3, HCl are poured into the reaction tube for 30min at a flow rate of 20l, 400cc, 10cc and 200cc per minute respectively and an N type layer is epitaxially grown on the surface of an Si substrate. In this way, the grown layer having a few crystal defect is obtained. |
