| 摘要 |
PURPOSE:To obtain a surface protecting film which is chemically stable also in a later heat treatment process, by using an amorphous material layer containing H2 as a passivation film wherein Si and C are main components, when providing the film on a semiconductor substrate whereon semiconductor elements are formed. CONSTITUTION:A base region B is diffusion-formed on an Si substrate 1 serving as a collector region, an emitter region is provided therein, and an SiO2 film 2 is adhered over the entire surface. Next, open holes 3 corresponding to the regions B and E are opened on this film 2, and Al wirings 4 contacted on the regions B and E exposed to the inside of the open hole 3 are adhered on the film 2 by extending thereon. Thereafter, the entire surface is covered with the passivation film 6, and thereat an amorphous[Si1-xCx]1-y[H]y (x=0.1, y=0.3) containing H2 wherein Si and C are main components is used as the film 6. After such a manner, open holes are provided on this film 6, and Al wirings 7 are mounted on the exposed part of the wiring 4. Thus, a protecting film which is remarkably delicate and has good adhesiveness can be obtained. |
