| 摘要 |
PURPOSE:To obtain a substrate for an MOS device with good crystalinity and electric characteristics, by placing an insulating substrate whereon an Si semiconductor crystal layer is grown on the surface so that the crystal layer is exposed, and retaining for 0.5hr or more with the substrate temperature kept at 100-900 deg.C. CONSTITUTION:A semiconductor crystal layer is grown on an insulating substrate of sapphire, etc. at 950-1,000 deg.C by using a vapor growing gas of SiH4/ H2, and an obtained SOS filmis settled in a plasma treatment device. Next, the inside of the device is formed vacuum at 10<-6> Torr, the air is exhausted resulting in the vacuum pressure of 10<-4> Torr, and the residual air is purged by introducing an Ar gas. Thereafter, the vacuum pressure is restored to 10<-6> Toor, an H2 gas is carried in until the state of 10<-2> Torr resulting in the substrate temperature kept at 100-900 deg.C, and a treatment is performed for 0.5hr or more by changing the H2 gas into a plasma. In this manner,the Al redistribution from the sapphire substrate is not caused, and a substrate with good crystallinity can be obtained. |
