| 摘要 |
<p>The invention relates to the construction of integrated logic circuits using field effect transistors with low threshold voltage, referred to as "quasi-normally blocked", which allow the provision of logic functions with a high fan-in. A circuit thus constructed comprises at least one input stage. This input stage, situated between the supply voltage and earth, consists of a saturable resistor (Z1) in series with at least one transistor (T1) of the above type, a feedback diode (D1) biased in the direction going from the supply potential towards earth being inserted between the source of the transistor (T1) and earth. Application to field-effect transistor logic on a gallium arsenide substrate. <IMAGE></p> |
