Electron beam exposing method.

摘要

In a method of irradiating selected portions of a resist layer, an electron beam is projected to a desired pattern region, the acceleration voltage of the electron beam is set at a value at which the distribution of the scattered electrons in a predetermined region is substantially uniform, and the exposure dosage is determined according to the ratio between the total area of the patterns to which the electron beam is projected in the predetermined region and the area of the predetermined region. This can simplify calculation of the required exposure.