| 摘要 |
PURPOSE:To obtain an IGFET capable of forming a target electric circuit without addition or alteration to manufacturing steps by forming at least two terminals at the end or in the course of a gate electrode, employing the gate electrode itself as a resistance element, flowing a current onto the gate electrode and imparting the gradient of the potential. CONSTITUTION:Terminals 5, 6 are provided at both ends of a gate electrode, thereby forming an IGFET as electrically shown, a voltage is applied between the terminals 5 and 6, and when a current is flowed, the gradient of potential is produced in the channel region of the IGFET, the ultrafine part is provided with a conductance between the source and the drain responsive to the potential, with the result that the prescribed conductance is provided between the terminals 7 and 8. Accordingly, the variation in the current between the gate terminals 5 and 6 becomes the variation in the conductance between the source 7 and the drain 8. Thus, the IGFET operates as a current amplifier. In this manner, an IGFET circuit which has threshold value and input/output impedances in a plurality of circuits can be formed. |
