SEMICONDUCTOR DEVICE

摘要

PURPOSE:To increase the degree of freedom of wirings between laminated semiconductor layers without partly concentrating the signal output terminal to exterior from a semiconductor and to decrease the impedance of the wire of a power source by wiring between the layers with the side surface of the laminated layers. CONSTITUTION:An active element is formed of n<+> type diffused layers 2, 3 and a gate electrode 6. Numeral 7 designates a wire electrode formed on the first semiconductor layer 1. The peripheral end A of the second semiconductor layer 9 is smoothly and obliquely formed on the first layer 1. 14 designates a gate electrode. 15 is a wire electrode of an active element formed on the second layer 9. Wire electrode 7 on the layer 1 and wire electrode 15 on the layer 9 are connected through the oblique peripheral end A of the layer 9 directly in the section B. Since the wire between the semiconductor layers laminated in thicknesswise direction smoothly form obliquely the wire electrode, the electrode wire can be formed between the first and the second layers without stepwise disconnection.