发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To boost a positive voltage as required and to enhance carrier transfer efficiency by forming a semiconductor region having such a conductive type as making the carrier as the minority carrier within the semiconductor region. CONSTITUTION:The semiconductor regions 2 and 3 are charged respectively to the negative and positive potentials for the semiconductor region 1. The carrier 5 is implanted to the semiconductor 1 from the semiconductor region 2. The lattice or mesh P<+> type semiconductor region 11 is formed as such a conductive type as making carrier as the minority carrier within the semiconductor region 1. The end part 7 of the depletion layer diffusing into the semiconductor region 2 from the P-N junction 6 is suppressed within the semiconductor region 11 even when a positive potential of the semiconductor region 3 for the semiconductor region 1 is kept high. |
申请公布号 |
JPS5837957(A) |
申请公布日期 |
1983.03.05 |
申请号 |
JP19810135984 |
申请日期 |
1981.08.29 |
申请人 |
NIPPON DENSHIN DENWA KOSHA |
发明人 |
AMAMIYA YOSHIHITO;MIZUSHIMA YOSHIHIKO |
分类号 |
H01L29/73;H01L21/331;H01L29/72 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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