AMORPHOUS SILICON SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To obtain the a-silicon semiconductor device having excellent semiconductor function by providing the first a-silicon layer containing the antimony and the second a-silicon layer containing the aluminum. CONSTITUTION:The bell jar 1 is connected to the vacuum pump (a) through the exhaust path 3 and is kept in the high vacuum condition. The substrate 4 is placed therein and is heated by the heater 5 and simultaneously a negative voltage is applied to the substrate 4 by the power source 6. Then, while the hydrogen is being supplied to the bell jar 1 from the hydrogen discharge tube, both silicon evaporation source 8 and antimony evaporation source 10 are heated. The a-silicon to which both antimony and hydrogen are implanted is deposited on the substrate 4 and the first a-silicon layer 30 containing the antimony of 0.01-10atom% is formed. Thereafter, both evaporation source 8 and aluminum evaporation source 12 are heated and the second a-silicon layer 31 containing the aluminum of 0.01-10atom% is formed.