| 摘要 |
PURPOSE:To analyze quantitatively Ga in a sample fast and accurately by treating an Si-Ge-Ga alloy sample with hydrofluoric acid, nitric acid and boric acid. CONSTITUTION:An Si-Ge-Ga alloy sample is dissolved in a polymer-beaker by using hydrofluoric acid and nitric acid. Next, H2SO4 is added to said solution and charged into a platinum dish then, most of HF is removed by heating, concentration and fuming. Thereafter, oxalic acid (COOH)2.2H2O and water are added and said solution is heated on a warm water bath and then, a white precipitate GeO2 is dissolved. Moreover, boric acid (H3BO3) is added and residual F<-> is masked and then, a sample solution is prepared by adding water. Said solution is emitted by a plasma spectroanalyser and the quantitative analysis of Ga is made by measuring 2944Angstrom emission intensity. |
