| 摘要 |
<p>A method of producing a semiconductor device comprises heating a silicon substrate in an atmosphere containing ammonia to react the exposed silicon with nitrogen atoms with the result of producing a silicon nitride film. In practice, the exposed surface of the silicon substrate is heated up above 900oC in the atmosphere of inert gases such as argon or the like, whereby spontaneous oxide films and impurity particles on the exposed surface are removed by a gas phase etching. The silicon substrate is subsequently heated up to a temperature range from 900oC to 1300oC to produce the amorphous silicon nitride film which is dense and uniform.</p> |
