发明名称 MOLECULAR BEAM EPITAXIAL GROWTH APPARATUS
摘要 PURPOSE:To keep clean each chamber by providing the transfer mechanism to the space coupled by the gate valve which joins the molecular beam cell auxiliary processing chamber and the crystal growth chamber. CONSTITUTION:The molecular beam cell auxiliary chamber 3 is coupled with the crystal growth chamber 2 by the gate valve 5 and is provided with the cell transfer mechanism 16 which alternatively transfers the cell 13 to the crystal growth chamber 2 and auxiliary chamber 3 via the gate valve 5. Thereby, the clean evaporation material can be supplied without exposing the crystal growth chamber to the atmospheric condition and the vacuum atmosphere in the growth chamber can always be kept clean. Accordingly, the high purity epitaxial growth layer which is resistive to the contaminating elements can be obtained. Gas separation and purification of cell carried out simultaneously with epitaxial growth realizes curtailment of water manufacturing period by the epitaxial growth.
申请公布号 JPS5833825(A) 申请公布日期 1983.02.28
申请号 JP19810130868 申请日期 1981.08.22
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 SUGIURA HIDEO;KATSUI AKINORI;KAMIMURA ZEIO
分类号 H01L21/203 主分类号 H01L21/203
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