MOLECULAR BEAM EPITAXIAL GROWTH APPARATUS

摘要

PURPOSE:To prevent the impurity gas containing contaminating elements to reach the substrate surface for epitaxial growth by arranging the cooling vessel for preventing contamination of substrate in such a way as surrounding the substrate for depositing the epitaxial growth layer and by cooling such substrate. CONSTITUTION:The cooling vessel 6 is of the hollow cylindrical not providing the bottom as a whole and the substrate 4 can be arranged within such hollow portion. Since the substrate is arranged at the inside of vessel being cooled by the liquid hydrogen or liquid helium, the impurity gas mixing the contaminating elements does not reach the substrate surface for epitaxial growth and thereby the very high purity molecular beam epitaxial growth can be realized.