| 摘要 |
PURPOSE:To enable a high speed switching of a semiconductor device by laser annealing a dielectric film on an Si substrate and a polycrystalline Si film formed on a window to form a single crystal Si film and forming a P-N junction on the dielectric film, thereby reducing the junction capacity. CONSTITUTION:A dielectric film 2 is partly formed on the surface of an Si single crystal semiconductor substrate 1, a polycrystalline Si film 7 is formed on the surface of the substrate formed with the dielectric film, a single crystal Si film 4 on the window of the film 2 and part of the film 4 on the film 2 connected to the film 4 are formed of a single crystal Si film 5, the other part of the film 2 is formed of a polycrystalline Si film 7, a gate dielectric film 8 is formed on the film 4, and P-N junction made of a diffused layer to become a source or drain is formed on a gate electrode 9 formed on the film 8 and the film 5 on the film 2. In this case, the film 2 on the substrate 1 and the polycrystalline Si film formed on the window 3 are laser annealed to form single crystal Si films 4, 5 and to form a P-N junction on the film 2. |
