| 摘要 |
PURPOSE:To strengthen the surface protective film of a semiconductor device against a heat treatment by determining the thickness of a phosphorus glass film at 300-1,000Angstrom and the thickness of a silicon nitrided film at 200-600Angstrom . CONSTITUTION:A silicon oxidized film 2 is formed on an N type silicon semiconductor substrate 1, a window is opened by a photoresist method, thereby forming a P type diffused region 3. The film 2 is covered on the overall surface, and phosphorus is then diffused, thereby forming a phosphorus glass layer film 4 on the surface of the film 2. At this time, the thickness of the film is 300- 1,000Angstrom . Further, a silicon nitrided film 5 is grown on the film 4, the thickness thereof being 200-600Angstrom . |
