| 摘要 |
PURPOSE:To attain high activation efficiency without giving any damage on the surface by gradually increasing irradiation intensity and then gradually decreasing it in the light irradiation annealing method. CONSTITUTION:The maximum irradiation intensity per unit area is kept at almost the constant value about 5X10<4>W/cm<2>, and the ascending and descending times of irradiation energy density are respectively changed from 200musec to 1,000musec for experiments. Thereby, the light irradiation annealing method assuring a high activation coefficient without accompanying generation of crystal defect can be realized at the respective ascending and descending time of irradiation energy density of 400musec or more. |
