| 摘要 |
PURPOSE:To enable to microminiaturize a semiconductor element by self-aligning a connector betwen upper and lower layer wirings with the lower layer wiring. CONSTITUTION:An SiO2 film 2, the first PSG layer 3 and a photoresist film 4 are formed on an Si substrate 1. Then, with the film 4 as a mask the layer 3 is removed to form a trapezoidal PSG layer 3'. Thereafter, an aluminum layer 5 and a photoresist film 6 are formed. Subsequently, with the film 6 as a mask the layer 5 is etched to form a lower layer wire 7 which is made of an aluminum layer 5' and a PSG layer 3''. Successively, an insulating layer 9 is formed on the overall surface of the substrate 1. Then, the surface part of the layer 9 is removed to expose an projection 8. Thereafter, an upper layer wiring 11 is formed. |
