| 摘要 |
PURPOSE:To form isolating grooves having small pattern conversion difference by forming polycrystalline silicon on the inner wall of the groove for isolating between elements and thermally oxidizing the silicon. CONSTITUTION:A silicon oxidized film 31 and a silicon nitrided film 41 are formed on a n element region 2 of a silicon substrate 1, and with a resist 5 as a mask a substate 1 is etched. Then, the resist 5 is removed to form grooves 6. Then silicon oxidized film 7 is formed on the inner surfaces of the grooves 6. Subsequently, a polycrystalline silicon film 8 is formed. Thereafter, the film 8 is etched to remove only the film 8 on an element region, and a polycrystalline silicon 81 is allowed to remain on the side surfaces of the grooves. Then, the silicon 81 is thermally oxidized to increase its volume, thereby forming a silicon oxidized film 91. Subsequently, the films 41, 31 are removed to form a semiconductor element on the region 2. |
