发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To prevent the deterioration of a semiconductor laser by forming a slot which extends between the ends from the first main surface on an insulating substrate and laminating the first conductive clad layer, a semiconductor active layer and the second semicondutor clad layer in the slot. CONSTITUTION:A slot 6 which extends in a stripe shape between the ends 4, 5 from the main surface 2 is formed on an insulating substrate 1. The first semiconductor clad layer 7, a semiconductor active layer 8 and the second semiconductor clad layer 9 are laminated in the slot 6, thereby forming a laminate 13. Further, electrode 11 which extends on the inner surface and main surface 3 of a recess 10 is ohmically connected from the side of the recess 10 formed in the first layer 7 from the main surface 3 to the substrate 1. An electrode 12 which extends on the main surface 2 from the side of the surface 2 is ohmically connected to the layer 9.
申请公布号 JPS5833888(A) 申请公布日期 1983.02.28
申请号 JP19810133140 申请日期 1981.08.25
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 MATSUOKA TAKASHI;NAGAI HARUO
分类号 H01S5/00;H01S5/227 主分类号 H01S5/00
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