发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To prevent the end surface from deteriorating due to concentration of a current by interposing an active layer with a pair of clad layers of reverse conductive type to each other and forming a contact diffused layer intruded into the inside from both ends of the active layer on the surface of one clad layer. CONSTITUTION:A channel 2 is formed on the main surface of a substrate 1, a lower clad layer 3, an active layer 4, an upper clad layer 5 and a cap layer 6 are laminated, and an anode electrode 7 is formed. Then, a contact diffused layer 8 is formed over the surface layer of the layers 6, 5. In this case, both ends of the layer 8 are disposed inside the end surfaces of the layers 6, 5. Further, a cathode electrode 9 is formed on the lower surface of the substrate 1.
申请公布号 JPS5833886(A) 申请公布日期 1983.02.28
申请号 JP19810131546 申请日期 1981.08.24
申请人 HITACHI SEISAKUSHO KK 发明人 UCHIDA HISATOSHI
分类号 H01S5/00;H01S5/16;H01S5/223 主分类号 H01S5/00
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