| 摘要 |
PURPOSE:To enable chromium etching to be executed favorably in microprocessing for fabricating integrated circuits, by projecting far UV rays on the whole positive pattern obtained by developing an image depicted by electron beams, and further developing it. CONSTITUTION:A film of a resist composition decomposed by irradiation of electron beams and converted into a positive pattern, having general formulaIembodied by formula II, etc. is formed and patternwise depicted by electron beams, and developed to obtain a resist pattern. The resist composition is decomposed by irradiation of electron beams to form areas soluble in a developing solution, but an extremely thin resist layer remains and inhibits etching of chromium. Therefore, irradiation of the whole surface of the developed pattern decomposes said thin layer of the resist, and the following development removes it perfectly, thus permitting the following etching of chromium to be favorably executed. |
