| 摘要 |
PURPOSE:To enable a semiconductor laser to perform a large optical output oscillation by a method wherein the end faces of resonators are slantingly formed in relation to the lengthy direction of resonators as to make light proceeding in an active layer to the lengthy direction of the resonator to be reflected totally to the direction of the stripe type double hetero junction structural resonator on another side. CONSTITUTION:An N type Al0.4Ga0.6As clad layer 11, an Al0.1Ga0.9As active layer 12 and a P type Al0.4Ga0.6As clad layer 13 are made to grow continuously on an N type GaAs substrate 10. Then an SiO2 film 14 is adhered thereon, and leaving the SiO2 films 14 having 2mum breadth and 220mum length at the interval of 3mum breadth and as to be in parallel, for example, the other part is etched off according to the photo resist method and the etching method. At this time, at the four tip ends of the rectangular films, the edges on the opposite sides of the films 14 having the interval of 3mum breadth are slenderized to make the tip ends as to have the angles of 13 degrees, for example. And the whole is etched up to reach the substrate 10. Then the semiconductor laser is cut out, and the distance from the cleavage plane up to the tip end of the double hetero junction is made a little longer than diffusion length of carriers. |
