| 摘要 |
PURPOSE:To prevent excessive etching when a polycrystalline Si patterning is performed on the surface of a substrate by a method wherein the opened contact part on the substrate is covered by a polycrystalline Si. CONSTITUTION:An n type source and drain region 13, a polycrystalline Si 12 which will be turned to a wiring layer, a contact part 11, an n<+> type impurity introducing region 14 and a polycrystalline Si 15 are formed on a p type Si substrate 16. If the Si 15 of W1-2mum in width is formed, the regions 13 and 14 come in contact with each other and turns into a conductive status by the diffusion of impurities in lateral direction which will be performed when the region 14 is formed. In this case, as the Si 12 is covered on the surface of the opened contact part 11, the surface of the substrate is not excessively etched when an Si patterning is performed. Accordingly, the semiconductor device of excellent quality, having no junction generated at the contact part of the polycrystalline semiconductor and the n<+> diffusion layer, can be obtained. |
