| 摘要 |
PURPOSE:To perform electron beam exposure at oblique-run spots correctly to the original pattern by differentiating the delay times corresponding to the addresses of the edges of a pattern that runs obliquely to the scan direction of the exposure beam from the delay times at the other places. CONSTITUTION:''1'' and ''0'' information of a pattern is stored in a memory 20 and the addresses to start beam exposure and beam shielding and the information on a delay time are stored in a memory 23 in the order of scanning. A delay circuit is provided with, for instance, increment 2.5ns from 0 to 25ns, and converted by a circuit 24. Reference extension time is taken at 12.5ns, and the delay time is set at over 15.0ns or under 10.0ns. With the scanning started, the first address of the memory 23 and the delay time are read 21 successively. When the addresses are the same, the circuit 25 is converted based on the delay time, and the information on exposure and shielding is sent to an applying circuit 22. If, in the figure, points 16 and 19 out of the exposure starts and exposure finishes and other oblique step-like points of the scanning locus are set at 22.5ns and other points, 15, 17, and 18 are set at 12.5ns, the center line 13 of an oblique patterns 2 are not displaced and the accuracy of pattern overlap can be improved. |
