| 摘要 |
PURPOSE:To enable to perform a reliable self-alignment for the titled MOSFET by a method wherein an oxide Mo film is obtained by oxidizing a part of the surface of the Mo layer which will be turned to a gate electrode, and a self- aligning method, in which said Mo film is used as a mask, is used. CONSTITUTION:An oxide Si film 2 and an Mo layer 3 are laminated successively on the surface of a p type Si substrate 1. Then, an oxide Mo film 4 is formed on the surface of the layer 3 by oxidizing a part of the surface of the layer 3. A patterning is then performed only on the part which will be turned to the gate region of the MOSFET, leaving the layers 3 and 4. Then, a p type source 5 and a drain 6 are formed by implanting a p type impurity ion into the substrate 1 by performing a self-aligning method using the films 3 and 4 which were left over by patterning. The layer 3 is then exposed by removing the layer 4, and this exposed layer 3 is used as a gate electrode. Accordingly, a reliable self- alignment can be performed and, as a result, the MOSFET, which has Mo as a gate electrode, of stabilized characteristics can be obtained. |
