| 摘要 |
PURPOSE:To manufacture easily a favorable semiconductor laser element having favorable reproducibility by a method wherein at the prescribed conductive type semiconductor multilayer structure containing the laser active region, at least the two mutually independent semiconductor diffusion regions are provided from the upper face. CONSTITUTION:An N type Ga0.5Al0.5As layer 2, an N type Ga0.9Al0.1As active layer 3, an N type Ga0.5Al0.5As layer 4 are made to grow in order on an N type GaAs substrate 1 according to the usual liquid phase growth method. Then an Si3N4 film 6 is formed on the surface of crystal, windows 9 of 3X3mum<2> size are opened at the 12mum pitch on a straight line, and Zn is made to be diffused in the front side of the active layer. The heat treatment is performed to make Zn to be diffused being extended up to make the diffusion front to reach in the layer 3 or the layer 2, and the P type semiconductor regions 5 are formed. After then a Cr-Au electrode 7 is formed on the surface 10, and an Au-Ge-Ni electrode 8 is formed on the back. A cleavage is performed to form a cleavage plane 20, and a chip is formed. |
