发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To electrodeposit fine glass powder uniformly on a mesa grooves among pellets on a wafer by applying cataphoresis, using electrodes that have a larger porosity rate at the peripheral section. CONSTITUTION:Stainless steel rings 11 are supported by radially extending rods 12 around the circumference of a central circular plate made of stainless steel, and the distance between the rings 11 is larger towards the circumference. An electrode 18 is formed by making the electric field intensity at the circumference equal to that of the central position. The electrode 18 is immersed into an electrodeposition solution 7. The electrode 18 is made positive and the wafer 1 negative and voltage is applied to both to make the fine glass powder in the solution electrodeposited on an exposed mesa groove. With this constitution the thickness of the glass electrodeposition on the mesa groove becomes uniform on the whole wafer area with the result of improved ratio of good products.
申请公布号 JPS5832421(A) 申请公布日期 1983.02.25
申请号 JP19810130557 申请日期 1981.08.20
申请人 NIPPON DENKI KK 发明人 KITAHARA FUMIHIKO
分类号 H01L21/316;(IPC1-7):01L21/316 主分类号 H01L21/316
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