| 摘要 |
PURPOSE:To protect the polycrystalline Si film of the titled substrate from contamination by resist by a method wherein, immediately after the polycrystalline Si film has been formed, a CVD oxide film is covered thereon. CONSTITUTION:A CVD oxide film 2, the polycrystalline Si film 3, and a CVD oxide film 9 are successively formed on a quartz substrate 1. Then, resist 4 is applied on the film 9, a patterning is performed, and the film 9 is etched using the resist 4 as a mask. Subsequently, after the resist 4 has been exfoliated and an etching has been performed on the film 3 using the film 9 as a mask, the film 9 which was used as an etching mask is removed by etching. An oxide film 5 is formed on the surface of the film 3, and a polycrystalline Si 6 is then deposited on the above. As a result, the film 3 is completely protected from external contamination while it is being processed, and the contamination by the resist 4 can be prevented perfectly. |
