| 摘要 |
PURPOSE:To form a minute ion implantation area by pouring ions upon a base plate by using as a liquid metal ion source, an impure element necessary for the manufacture of a semiconductor device and can be introduced by an ion implantation method. CONSTITUTION:An alloy 1 which is a component element of a base plate and is used as a liquid metal ion source, is fused by being attached to a needle electrode 2. When voltage is applied across the needle electrode 2 and a drawer electrode 3 provided with a hole, the alloy 1 undergoes a field evaporation and a field ionization at the extreme end of the electrode 2, and ionized atoms jump out of the alloy 1 to make a current. Next, voltage is applied to an ion beam sent through the hole of the electrode 3 so as to accelerate the beam, and an image having an almost equal multiplying factor to the ion source is imaged upon a base plate 5 by means of an electrostatic lens 4. An arbitrary amount of ions are implanted on the arbitrary position of the plate 5 by curving the beam by means of a deflecting electrode 6. By the means mentioned above, impure elements necessary for a semiconductor can be used as a liquid metal ion source. Besides, ions can be implanted upon the base plate 5 without sending the ion beam through a mass spectrograph. |
