| 摘要 |
PURPOSE:To contrive reduction of the time required for formation of silicide by a method wherein impurities are implanted into the double-layer structure of polycrystalline Si and a high melting point metal, and a silicide layer consisting of the polycrystalline Si and the high melting point metal is formed by performing a heat treatment. CONSTITUTION:The polycrystalline Si 2 layer is formed on an Si substrate 1, and the layer of a high melting point metal such as Mo and the like is formed on the surface of said Si 2 layer. Subsequently, the impurities such as P-ion, for example, is implanted into Mo3 and Si2 layers from the surface of Mo3, and then a heat treatment is performed thereon. As a result, a silicide 4 layer consisting of Mo3 and Si2 is formed on the area spreading from the interface of Mo3 and Si2 to Mo3. The thickness of said silicide 4 layer can be controlled by increasing or decreasing the quantity of implantation of the P-ion which is used as impurities. Accordingly, the time required for silicide formation can be reduced and the resistor of optional value can also be obtained. |
