| 摘要 |
PURPOSE:To enable to obtain satisfactory pair property and excellent temperature characteristics by forming P-channel and N-channel junction field transistors (J-FET) on one chip. CONSTITUTION:An N-type impurity such as Sb is selectively diffused in a P type semiconductor substrate 2, thereby forming a buried layer 1. Subsequently, a P type epitaxial layer 3 is formed with P type impurity such as boron, and the N type impurity is diffused, thereby forming an N<+>type substrate pickup region 6 and a well region 7. An N type impurity such as phosphorus is diffused in an insular region 8, thereby forming a gate 9 and a gate 10 simultaneously by diffusing the P type impurity in the region 7. The P type impurity such as boron is diffused in the region 8, thereby forming a source 11 and drain 12 of a P- channel J-FET 4, and diffusing the N type impurity in the region 7, thereby forming the source 13 and the drain 14 of an N-channel J-FET 5. |
