| 摘要 |
PURPOSE:To obtain a semiconductor device in which elements are isolated without decreasing the performance of the elements by providing an insulating layer containing charge for depleting the other conductive type impurity region of low density on the surface of an element isolating region. CONSTITUTION:An isolated p type region 28 and a thick insulating film 29 formed on the surface of the region 28 are formed. The boundary region of the element of the isolating region is formed particularly with a p<+> type region 30 of high density, and surrounds the element. In the film 29, positive ions of silicon or argon are implanted to include the positive charge therein, thereby completely depleting a p- type region 28 directly under it. In this manner, in the SOS structure of this embodiment, the isolation between the elements is complete, and no abnormality in the characteristics occur due to the improper gate withstand voltage and parasitic transistor. Since high temperature and long time heat treatment is not necessary, the leakage current between the source and the drain is not increased. |
