| 摘要 |
PURPOSE:When a single crystal of Gd, Ga or garnet is formed using an iridium crucible by the Chokralsky method, a trap of iridium is inserted into the starting material melted in the crucible to prevent the single crystal from being contaminated by iridium. CONSTITUTION:One of high-purity Gd, Ga, garnet or the like 8 is placed in an iridium crucible 1, melted by heating with coils 4, then a seed single crystal is dipped into the melt and the short holder 8 for the seed crystal 7 is gradually pulled up as it is being rotated to effect the growth of the single crystal 9. At this time, an iridium trap of mesh, ball or rod is dipped in the melt 8 to capture the iridium dissolving out of the crucible into the melt 8 and prevent the single crystal 9 from being contaminated with iridium, thus the purity of the single crystal is kept extremely high. |
