| 摘要 |
PURPOSE:To form a metal silicide film containing a specific amount of impurity, by placing a silicon target doped with a specific amount of impurity and a metal target opposite to the substrate in an air-tight vessel, and carrying out the sputtering in the vessel. CONSTITUTION:The Si substrate 21 is placed on the substrate table 22 in the bell jar 23, and the Si target 31 doped with a specific amount of P atoms as impurity and the Mo target 25 are placed opposite to the substrate 21. The evacuation valve 26 is opened to evacuate the bell jar to a vacuum, and Ar gas is introduced into the bell jar through the gas inlet 27. A high electrical potential is applied between the targets 25, 31 and the substrate table 22, and the targets 25, 31 are sputtered by the electrical discharge in Ar gas. An MoSi2 film containing the required amount of P is deposited on the substrate 21 by this procedure. W, Ta, etc. may be used as the metal target in place of Mo, and As, B, etc. may be used as the impurity in place of P. |
