发明名称 |
GATE PROTECTION FOR INSULATED GATE SEMICONDUCTOR DEVICES |
摘要 |
An insulated gate semiconductor device contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate. |
申请公布号 |
GB2103877(A) |
申请公布日期 |
1983.02.23 |
申请号 |
GB19820020894 |
申请日期 |
1982.07.20 |
申请人 |
* HITACHI LTD |
发明人 |
|
分类号 |
H03F1/52;H01L27/02;H01L27/04;H01L27/06;H01L29/78;H02H7/20;H03F1/42;(IPC1-7):01L29/78;01L29/58 |
主分类号 |
H03F1/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|