Dynamic semiconductor memory cell.

摘要

A single device dynamic semiconductor memory is formed having a P-type conductivity injector region (72) with high-low-high junctions of N-type conductivity disposed below the injector region. Those junctions trap injected minority charges which are detected by sensing the current flow from a source region (68) to a drain regions (51) which are located on opposite sides of the injector region (72). The source (68) and injector region (72) utilize ohmic contact while the low barrier Schottky contact (80) is made to the drain region (51). In order to provide separation between the depletion region of the Schottky contact (80) and the injector region (72), a heavily doped N (22) region is provided.