| 摘要 |
PURPOSE:To prevent thermal deterioration of a semiconductor substrate by covering the substrate with metal powder of one of the substrate composition atoms with the highest vapor pressure and preheating the substrate. CONSTITUTION:An As powder 17 is accommodated in a well 10, and by operating a jig 4 a GaAs substrate 11 is covered with the As powder. In the presence of H2 and at a temperature of 800 deg.C a substrate 11 is made contact with a solution of N type Ga0.6Al0.4As 12 for 3min. During this process the As powder on the substrate surface is melted into the solution, making the substrate surface clean. Next, a buffer layer of the solution 12 is made by gradually decreasing the temperature, and the substrate is successively made contact with N type Ga0.5Al0.5As 13, Ga0.85Al0.15As 14 contg. no additive, P type Ga0.5Al0.5As 15 and P type GaAs 16. In a crystal grown by this method the substrate 11 is not deteriorated thermally and a perfect mirror surface with no dislocation, etc. can be obtained, thus yielding a semiconductor device with superior characteristics. |
