| 摘要 |
PURPOSE:To prevent deterioration in withstanding voltage at a junction of a source and a drain and to prevent dark current, by completely covering the substrate surface with a titanium nitride film whose etching rate is extremely low, until patterning is completed including over etching, and eliminating damage of the surface of the substrate and gas-ion implantation. CONSTITUTION:A gate insulating film 3 is formed on a semiconductor substrate 1. A titanium nitride film 4 is formed on the gate insulating film 3. A W conductor layer 5, which is a material for a gate electrode, is formed on the titanium nitride film 4. The conductor layer 5 is selectively etched by a reactive ion etching method having superior selectively to the conductor layer 5. A gate electrode pattern 105 consisting of the conductor layer 5 is formed. The titanium nitride film 4 which is exposed around the gate electrode pattern 105 is removed by reactive ion etching method having superior selectivity to the titanium nitride 4. At this time, the titanium nitride film 4 function as a channel stopper. Thus deterioration in withstanding voltage at a junction of a source and a drain and the yield of dark current can be prevented. |
