| 摘要 |
PURPOSE:To produce the specified resistance element with high precision from low to high resistance within specified area by a method wherein, when a resistance element is provided on a thin film integrated circuit, unqualified semiconductor doped with impurities is used. CONSTITUTION:The glass substrate 1 is coated with the gate electrode metal film 2 and the overall surface including said film 2 is covered with the gate insulating film 3 grown in low temperature and then said film 3 is further coated with the amorphous Si film by means of the glow discharge docomposition. Then Si film 41 and 42 are left on the film 3 corresponding to the location of the film 2 and other location by means of selective etching. Next the overall surface including said films is covered with the amorphous Si film doped with impurities and likewise the film 51 and 52 are respectively left on the ends of said film 41 and on the overall surface of said film 42 by means of the etching. Then the electrode films 61 and 62 are formed on the film 3 and film 51 while the electrode films 62 and 63 are formed on the film 3 and the end of film 52. Through these procedures, the transistor and the resistance element may be formed at the same time. |
