| 摘要 |
PURPOSE:To realize a monolithic limiting circuit in an MOS integrated circuit, by forming a floating diode by the use of Schottky diode. CONSTITUTION:A limited level of output voltage of a limiting circuit is decided by the product of the number N of Schottky diodes for constituting one diode train, and forward voltage VF of 1 piece of said diode. Accordingly, the limited level of the output voltage can be set to various values by selecting the N suitably. A wire 408 is connected to an electric power supply terminal, and by contact of a P<-> well 402 and a metal 409, the Schottky diode is formed between a terminal 410 and 409. In this case, unlike a convetional P-N junction diode, a parasitic transistor is not formed, therefore, no through-current flows between terminals. Accordingly, a floating diode can be formed. |
